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| 2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK291 Absolute Maximum Ratings (Ta = 25C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings -15 -15 50 5 300 150 -55 to +150 Unit V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Symbol V(BR)GDO V(BR)GSO I GSS I DSS* 1 Min -15 -15 -- 5 -- 25 -- -- Typ -- -- -- -- -- 45 8.5 1.2 Max -- -- 10 50 -3.0 -- -- -- Unit V V nA mA V mS pF Test conditions I G = -100 A I G = -100 A VGS = -7 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 100 A VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) |yfs| Ciss Noise voltage referred to input en Note: Grade I DSS nV/Hz VDS = 5 V, ID = 5 mA, Rg = 0, f = 100 kHz T 36 to 50 1. The 2SK291 is grouped by I DSS as follows. P 5 to 16 Q 14 to 24 R 20 to 32 S 28 to 42 2 2SK291 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 450 Typical Output Characteristics 30 VDS = 5 V Drain Current ID (mA) V GS = 0 20 V -0.1 -0.2 -0.3 300 150 10 -0.4 -0.5 -0.6 -0.8 0 50 100 150 Ambient Temperature Ta (C) 0 2 4 Drain to Source Voltage VDS (V) 6 Typical Transfer Characteristics Forward Transfer Admittance yfs (mS) 30 VDS = 5 V Drain Current ID (mA) 60 50 40 30 20 10 0 -2.0 Forward Transfer Admittance vs. Drain to Source Voltage VDS = 5 V f = 1 kHz 20 10 0 -2.0 -1.6 -1.2 -0.8 -0.4 Gate to Source Voltage VGS (V) 0 -1.6 -1.2 -0.8 -0.4 Gate to Source Voltage VGS (V) 0 3 2SK291 Input Capacitance vs. Gate to Source Voltage Noise Voltage Referred to Input vs. Signal Source Resistance Hz) Noise Voltage Referred to Input en (nV/ 14 Input Capacitance Ciss (pF) VDS = 5 V f = 1 MHz 20 10 5 VDS = 5 V ID = 5 mA Ta = 25C f = 120 Hz 100 kHz 12 10 2 1.0 0.5 8 6 4 KTRg 1 10 1k 10 k 100 Signal Source Resistance Rg () 4 -1.0 0.2 -0.8 -0.6 -0.4 -0.2 Gate to Source Voltage VGS (V) 0 Noise Voltage Referred to Input vs. Frequency Noise Voltage Referred to Input vs. Drain to Source Voltage Hz) Noise Voltage Referred to Input en (nV/ 50 VDS = 5 V Rg = 0 Hz) Noise Voltage Referred to Input en (nV/ 20 10 5 f = 1 kHz ID = 10 mA Rg = 0 20 10 5 2 1.0 0.5 2 1.0 0.5 10 ID = 2m A 5m A 10 mA 100 kHz 100 10 k 1k Frequency f (Hz) 100 k 0.2 0.2 0.5 1.0 2 5 10 20 Drain to Source Voltage VDS (V) 4 2SK291 Equivalent Noise Resistance vs. Drain Current Equivalent Noise Resistance Req () 1,000 500 VDS = 5 V f = 0.5~4 MHz Equivalent Noise Resistance Req () 70 VDS = 5 V ID = 10 mA Equivalent Noise Resistance vs. Frequency 60 200 100 50 50 40 20 10 1 2 5 10 20 50 Drain Current ID (mA) 100 30 20 0 1 2 3 4 Frequency f (MHz) 5 5 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.45 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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